MOSFET Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Features

Designed for general-purpose amplifier and low speed switching applications.

• Collector-Emitter sustaining voltage
VCEO (sus) = 60V (Minimum) - TIP140, TIP145
= 80V (Minimum) - TIP141, TIP146
= 100V (Minimum) - TIP142, TIP147
• Collector-Emitter saturation voltage

VCE (sat) = 2.0V (Maximum) at IC = 5.0A
• Monolithic construction with Built-in Base-Emitter shunt resistor.

TIP142
TIP147

TIP142T
TIP147T

TIP42CTU ON / FSC
TIP41CTU ON / FSC

TIP42C ST
TIP41C ST

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications.

The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices.

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